BUK953R2-40B,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

FET Type :

N-Channel

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

888A

Avalanche Energy Rating (Eas) :

1200 mJ

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

40V

Power Dissipation-Max :

300W Tc

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.0035Ohm

Input Capacitance (Ciss) (Max) @ Vds :

10502pF @ 25V

Transistor Element Material :

SILICON

Pin Count :

3

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±15V

DS Breakdown Voltage-Min :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

100A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.29.00.75

Case Connection :

DRAIN