BUK9510-100B,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Pins :

3

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Fall Time (Typ) :

94 ns

Vgs(th) (Max) @ Id :

2V @ 1mA

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

9.7m Ω @ 25A, 10V

Turn On Delay Time :

60 ns

Continuous Drain Current (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

629 mJ

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Element Configuration :

Single

Vgs (Max) :

±15V

Published :

2017

Power Dissipation :

300W

Gate to Source Voltage (Vgs) :

15V

Package / Case :

TO-220-3

Packaging :

Tube

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Series :

TrenchMOS™

Turn-Off Delay Time :

250 ns

Surface Mount :

No

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

11045pF @ 25V

RoHS Status :

RoHS Compliant

Pin Count :

3

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Max Dual Supply Voltage :

100V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

300W Tc

Rise Time :

110ns

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 5V

Number of Elements :

1