BUK9507-30B,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.009Ohm

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

Fall Time (Typ) :

98 ns

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

157W Tc

Rise Time :

135ns

RoHS Status :

RoHS Compliant

Power Dissipation :

157W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Number of Pins :

3

Package / Case :

TO-220-3

HTS Code :

8541.29.00.75

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Vgs (Max) :

±15V

Max Dual Supply Voltage :

30V

Gate to Source Voltage (Vgs) :

15V

Turn-Off Delay Time :

99 ns

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Continuous Drain Current (ID) :

90mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Through Hole

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

3373pF @ 25V

Case Connection :

DRAIN

Pin Count :

3

Transistor Element Material :

SILICON

Packaging :

Tube

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Published :

2011

JESD-609 Code :

e3

Turn On Delay Time :

30 ns

Mount :

Through Hole

ECCN Code :

EAR99

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single