BUK9506-40B,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 5V

Power Dissipation :

203W

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain-source On Resistance-Max :

0.0071Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4901pF @ 25V

Series :

TrenchMOS™

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Continuous Drain Current (ID) :

129A

Gate to Source Voltage (Vgs) :

15V

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Contact Plating :

Tin

Element Configuration :

Single

Case Connection :

DRAIN

Published :

2010

Turn-Off Delay Time :

132 ns

Package / Case :

TO-220-3

Vgs (Max) :

±15V

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

43 ns

Transistor Element Material :

SILICON

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

516A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

40V

HTS Code :

8541.29.00.75

Fall Time (Typ) :

92 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Rise Time :

145ns

Power Dissipation-Max :

203W Tc

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

75A

Avalanche Energy Rating (Eas) :

494 mJ

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE