BUK9504-40A,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Pin Count :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.0059Ohm

Rise Time :

309ns

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

8260pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 5V

Power Dissipation :

300W

Gate to Source Voltage (Vgs) :

15V

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Packaging :

Tube

HTS Code :

8541.29.00.75

Power Dissipation-Max :

300W Tc

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Radiation Hardening :

No

Turn On Delay Time :

62 ns

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Continuous Drain Current (ID) :

198A

ECCN Code :

EAR99

Number of Pins :

3

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

75A

Published :

2011

Pulsed Drain Current-Max (IDM) :

794A

Number of Terminations :

3

Package / Case :

TO-220-3

Turn-Off Delay Time :

365 ns

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

306 ns

Surface Mount :

No

Element Configuration :

Single

Vgs (Max) :

±15V

Avalanche Energy Rating (Eas) :

1600 mJ

RoHS Status :

RoHS Compliant

Max Dual Supply Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN