BUK9219-55A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Rds On (Max) @ Id, Vgs :

17.6m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

114W Tc

Reach Compliance Code :

not_compliant

Number of Pins :

3

Case Connection :

DRAIN

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2920pF @ 25V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

120 mJ

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

Single

Fall Time (Typ) :

130 ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

400 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

10V

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101, TrenchMOS™

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

219A

Contact Plating :

Tin

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.02Ohm

Max Dual Supply Voltage :

55V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

130ns

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Published :

2010

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Factory Lead Time :

26 Weeks

Number of Terminations :

2

Continuous Drain Current (ID) :

55A

Turn On Delay Time :

45 ns

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

114W