BUK7C10-75AITE,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, TrenchMOS™

Transistor Application :

SWITCHING

ECCN Code :

EAR99

FET Type :

N-Channel

Mounting Type :

Surface Mount

Element Configuration :

Single

Contact Plating :

Tin

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Power Dissipation :

272W

Rise Time :

108ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

Continuous Drain Current (ID) :

75A

Terminal Form :

Gull wing

Pin Count :

7

Power Dissipation-Max :

272W Tc

Factory Lead Time :

12 Weeks

FET Feature :

Current Sensing

Turn-Off Delay Time :

185 ns

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Element Material :

SILICON

Published :

2008

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Surface Mount :

yes

Vgs (Max) :

±20V

Number of Terminations :

6

Turn On Delay Time :

35 ns

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 10V

Pulsed Drain Current-Max (IDM) :

456A

JESD-30 Code :

R-PSSO-G6

Max Dual Supply Voltage :

75V

Fall Time (Typ) :

100 ns

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

75V

Number of Pins :

7

Case Connection :

DRAIN