BUK7675-55A,118
- Mfr.Part #
- BUK7675-55A,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 20.3A D2PAK
- Stock
- 28,020
- In Stock :
- 28,020
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 2.9A
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 62W Tc
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 62W
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2014
- Max Dual Supply Voltage :
- 55V
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 81A
- HTS Code :
- 8541.29.00.75
- Pin Count :
- 3
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 10 ns
- Current - Continuous Drain (Id) @ 25°C :
- 20.3A Tc
- Fall Time (Typ) :
- 40 ns
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 10A, 10V
- Rise Time :
- 50ns
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 483pF @ 25V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 70 ns
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 55V
- Drain-source On Resistance-Max :
- 0.075Ohm
- Datasheets
- BUK7675-55A,118
N-Channel Tape & Reel (TR) 75m Ω @ 10A, 10V ±20V 483pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7675-55A,118 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 483pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.9A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 81A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 55V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
BUK7675-55A,118 Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 81A.
BUK7675-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7675-55A,118 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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