BUK766R0-60E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Fall Time (Typ) :

34 ns

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Published :

2014

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6m Ω @ 25A, 10V

Terminal Form :

Gull wing

Power Dissipation-Max :

182W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Turn On Delay Time :

19 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Number of Elements :

1

Turn-Off Delay Time :

38 ns

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.006Ohm

Max Dual Supply Voltage :

60V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, TrenchMOS™

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

182W

Rise Time :

36ns

Number of Pins :

3

Contact Plating :

Tin

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Continuous Drain Current (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc