BUK765R3-40E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Published :

2014

Number of Terminations :

2

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

40V

Case Connection :

DRAIN

Number of Elements :

1

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-609 Code :

e3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

28 ns

Surface Mount :

yes

Series :

Automotive, AEC-Q101, TrenchMOS™

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

2772pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

137W Tc

Continuous Drain Current (ID) :

75A

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

485A

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Pin Count :

3

Max Dual Supply Voltage :

40V

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 25A, 10V

Number of Channels :

1

Fall Time (Typ) :

13 ns

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Rise Time :

15ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

35.5nC @ 10V

Drain-source On Resistance-Max :

0.0049Ohm