BUK765R2-40B118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Transistor Application :

SWITCHING

Power Dissipation-Max :

203W Tc

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Published :

2000

JESD-30 Code :

R-PSSO-G2

Series :

Automotive, AEC-Q101, TrenchMOS™

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0052Ohm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

FET Type :

N-Channel

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.75

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

494 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3789pF @ 25V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

51ns

Continuous Drain Current (ID) :

143A

Turn On Delay Time :

15 ns

Max Dual Supply Voltage :

40V

Number of Terminations :

2

Pin Count :

3

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 25A, 10V

Lead Free :

Lead Free

Power Dissipation :

203W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

75A

Radiation Hardening :

No

Turn-Off Delay Time :

81 ns

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

56 ns