BUK7640-100A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Case Connection :

DRAIN

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

HTS Code :

8541.29.00.75

Number of Terminations :

2

Turn-Off Delay Time :

48 ns

Continuous Drain Current (ID) :

900mA

Rds On (Max) @ Id, Vgs :

40m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

149A

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

100V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Radiation Hardening :

No

Series :

Automotive, AEC-Q101, TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Rise Time :

55ns

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

138W Tc

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2293pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

138W

Turn On Delay Time :

12 ns

Contact Plating :

Tin

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.04Ohm

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Published :

2011

Fall Time (Typ) :

30 ns