BUK763R8-80E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 25A, 10V

Max Dual Supply Voltage :

80V

Drain to Source Breakdown Voltage :

80V

Number of Terminations :

2

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

357W Tc

Continuous Drain Current (ID) :

120A

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn-Off Delay Time :

129 ns

Input Capacitance (Ciss) (Max) @ Vds :

12030pF @ 25V

Number of Elements :

1

JESD-609 Code :

e3

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

786A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

488 mJ

FET Type :

N-Channel

Number of Pins :

3

Turn On Delay Time :

38 ns

Published :

2012

Gate to Source Voltage (Vgs) :

20V

Rise Time :

48ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

169nC @ 10V

Pin Count :

3

Series :

Automotive, AEC-Q101, TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Power Dissipation :

357W

Fall Time (Typ) :

65 ns

Element Configuration :

Single

Transistor Element Material :

SILICON