BUK7635-55A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Number of Elements :

1

Fall Time (Typ) :

20 ns

Drain to Source Breakdown Voltage :

55V

Rise Time :

62ns

ECCN Code :

EAR99

Power Dissipation-Max :

85W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

35m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

872pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Series :

Automotive, AEC-Q101, TrenchMOS™

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Max Dual Supply Voltage :

55V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

24 ns

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Case Connection :

DRAIN

Published :

2011

Avalanche Energy Rating (Eas) :

49 mJ

Mounting Type :

Surface Mount

Power Dissipation :

85W

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel