BUK762R9-40E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Rds On Max :

2.9 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Vgs (Max) :

±20V

Number of Pins :

3

Mounting Type :

Surface Mount

Power Dissipation-Max :

234W Tc

Drain to Source Breakdown Voltage :

40V

Turn On Delay Time :

24 ns

Drain to Source Resistance :

2.9mOhm

Supplier Device Package :

D2PAK

Element Configuration :

Single

Input Capacitance :

6.2nF

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Rise Time :

29ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Factory Lead Time :

6 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

32 ns

Published :

2012

Series :

Automotive, AEC-Q101, TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

40V

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 25A, 10V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

100A

Drain to Source Voltage (Vdss) :

40V

Max Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Turn-Off Delay Time :

54 ns

Vgs(th) (Max) @ Id :

4V @ 1mA