BUK7620-100A,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power Dissipation :

200W

Contact Plating :

Tin

Turn On Delay Time :

21 ns

Max Dual Supply Voltage :

100V

Power Dissipation-Max :

200W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

108 ns

Rds On (Max) @ Id, Vgs :

20m Ω @ 25A, 10V

ECCN Code :

EAR99

Fall Time (Typ) :

56 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

400 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

FET Type :

N-Channel

Surface Mount :

yes

Number of Terminations :

2

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Published :

2011

Peak Reflow Temperature (Cel) :

260

Rise Time :

87ns

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

63A

Series :

Automotive, AEC-Q101, TrenchMOS™

Drain-source On Resistance-Max :

0.02Ohm

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Lead Free :

Lead Free

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

4373pF @ 25V

Mounting Type :

Surface Mount

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING