BUK7613-75B118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Published :

2011

Vgs (Max) :

±20V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2644pF @ 25V

Max Dual Supply Voltage :

75V

Turn-Off Delay Time :

55 ns

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Turn On Delay Time :

18 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Fall Time (Typ) :

26 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

ECCN Code :

EAR99

Power Dissipation :

157W

Terminal Form :

Gull wing

FET Type :

N-Channel

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Rise Time :

36ns

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

157W Tc

Drain to Source Breakdown Voltage :

75V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

75A

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

Automotive, AEC-Q101, TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Pin Count :

3

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc