BUK7613-60E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Fall Time (Typ) :

9.8 ns

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

58A

Drain to Source Breakdown Voltage :

60V

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

10.8 ns

Max Dual Supply Voltage :

60V

Turn-Off Delay Time :

21.9 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Vgs (Max) :

±20V

Rise Time :

9.2ns

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Case Connection :

DRAIN

Published :

2014

Number of Terminations :

2

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

22.9nC @ 10V

Series :

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation-Max :

96W Tc

Number of Channels :

1

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Number of Pins :

3

Transistor Element Material :

SILICON