BUK7611-55B,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Turn On Delay Time :

11 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

157W Tc

Turn-Off Delay Time :

41 ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

84A

Series :

Automotive, AEC-Q101, TrenchMOS™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Power Dissipation :

157W

Fall Time (Typ) :

27 ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.011Ohm

Pin Count :

3

Transistor Application :

SWITCHING

Surface Mount :

yes

Number of Elements :

1

Vgs (Max) :

±20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

11m Ω @ 25A, 10V

JESD-30 Code :

R-PSSO-G2

HTS Code :

8541.29.00.75

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

2604pF @ 25V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Max Dual Supply Voltage :

55V

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

55V

Rise Time :

45ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3