BUK7608-40B,118
- Mfr.Part #
- BUK7608-40B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A D2PAK
- Stock
- 87,159
- In Stock :
- 87,159
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 33 ns
- Power Dissipation-Max :
- 157W Tc
- Peak Reflow Temperature (Cel) :
- 245
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 20 ns
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 101A
- Max Dual Supply Voltage :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Pin Count :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 25A, 10V
- Drain-source On Resistance-Max :
- 0.008Ohm
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Published :
- 2008
- Turn-Off Delay Time :
- 51 ns
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2689pF @ 25V
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Power Dissipation :
- 157W
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- ECCN Code :
- EAR99
- Rise Time :
- 51ns
- Pulsed Drain Current-Max (IDM) :
- 407A
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Mounting Type :
- Surface Mount
- Datasheets
- BUK7608-40B,118
N-Channel Tape & Reel (TR) 8m Ω @ 25A, 10V ±20V 2689pF @ 25V 36nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7608-40B,118 Overview
A device's maximum input capacitance is 2689pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 101A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 51 ns.Its maximum pulsed drain current is 407A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK7608-40B,118 Features
a continuous drain current (ID) of 101A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 407A.
BUK7608-40B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7608-40B,118 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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