BUK753R8-80E127
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- Mfr.Part #
- BUK753R8-80E127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- NOW NEXPERIA 120A, 80V, 0.004OHM
- Stock
- 45,569
- In Stock ：
- 45,569
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 65 ns
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Published :
- 2012
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 80V
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 488 mJ
- Drain-source On Resistance-Max :
- 0.004ohm
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 38 ns
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 120A
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 169nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 12030pF @ 25V
- Packaging :
- Tube
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Rise Time :
- 48ns
- Turn-Off Delay Time :
- 129 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 349W Tc
- Pulsed Drain Current-Max (IDM) :
- 758A
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 25A, 10V
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Datasheets
- BUK753R8-80E127
Specialized ICs NXP Semiconductors BUK753R8-80E,127 Overview
The Specialized ICs NXP Semiconductors BUK753R8-80E,127 is a high-performance, N-Channel MOSFET that excels in various demanding applications. This device offers an extremely low on-resistance of 4m Ω at a gate drive of 10V, allowing for efficient power handling and minimized heat generation at continuous drain currents up to 120A. It supports a gate-source voltage of up to ±20V, providing robust operation under fluctuating power supplies and during high transient voltages commonly seen in industrial applications.
This MOSFET's power efficiency is further highlighted by its rapid turn-on and turn-off delay times of 38 ns and 129 ns respectively, which are crucial for applications requiring fast switching capabilities. The maximum pulsed drain current is capable of reaching up to 758A, illustrating the device's capability to handle high transient currents without performance degradation. Additionally, the input capacitance of 12030pF at 25V ensures low noise performance, which is vital for power-sensitive applications.
The device's robustness is guaranteed by an avalanche energy rating (Eas) of 488 mJ, indicating its ability to withstand energy spikes during avalanche conditions—a common scenario in motor control and power supply units. With a standard TO-220-3 package, it combines excellent thermal and electrical capability, making it an ideal choice for high-power and high-performance applications in commercial and industrial environments.
Key Features
- Avalanche energy rating (Eas): 488 mJ, ensuring robust performance against high-energy spikes.
- Continuous drain current (ID): 120A, providing substantial throughput capacity for heavy-duty operations.
- Turn-off delay time: 129 ns, facilitating quick response times in circuits requiring fast switching.
- Maximum pulsed drain current (IDM): 758A, suitable for applications experiencing high transient currents.
- Gate-source voltage (VGS): ±20V, offering flexible and resilient gate control under variable conditions.
- Input capacitance (CI): 12030pF at 25V, minimizing electronic noise and enhancing signal integrity.
- Package: TO-220-3, ideal for efficient heat dissipation and ease of integration into various circuit designs.
Applications
The Specialized ICs NXP Semiconductors BUK753R8-80E,127 MOSFET is versatile enough to be used in a wide array of applications, making it highly valuable for both industrial and commercial markets. Key applications include:
- LCD/LED TVs
- Consumer Appliances
- Lighting Systems
- Uninterruptible Power Supplies (UPS)
- AC-DC Power Supplies
- Synchronous Rectification for ATX1 Server, Telecom PSUs
- Motor Drives
- Micro Solar Inverters
- DC/DC Converters
- Power Tools
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