BUK7535-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

HTS Code :

8541.29.00.75

Mounting Type :

Through Hole

Number of Elements :

1

Power Dissipation-Max :

149W Tc

Fall Time (Typ) :

35 ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

110 mJ

ECCN Code :

EAR99

Radiation Hardening :

No

Surface Mount :

No

Contact Plating :

Tin

Max Dual Supply Voltage :

100V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Pins :

3

Power Dissipation :

149W

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Turn-Off Delay Time :

56 ns

Pin Count :

3

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

165A

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

41A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

35m Ω @ 25A, 10V

Packaging :

Tube

Turn On Delay Time :

15 ns

Rise Time :

67ns

Input Capacitance (Ciss) (Max) @ Vds :

2535pF @ 25V