BUK7528-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Turn On Delay Time :

15 ns

Contact Plating :

Tin

Transistor Element Material :

SILICON

Element Configuration :

Single

Rise Time :

70ns

Pulsed Drain Current-Max (IDM) :

187A

JESD-609 Code :

e3

Turn-Off Delay Time :

83 ns

Drain Current-Max (Abs) (ID) :

47A

Mounting Type :

Through Hole

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Continuous Drain Current (ID) :

45mA

Vgs (Max) :

±20V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Power Dissipation :

166W

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.028Ohm

Qualification Status :

Not Qualified

Number of Elements :

1

Series :

TrenchMOS™

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-220-3

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation-Max :

166W Tc

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

45 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.75

Fall Time (Typ) :

45 ns

Rds On (Max) @ Id, Vgs :

28m Ω @ 25A, 10V