BUK7513-75B,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Drain to Source Voltage (Vdss) :

75V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

75A

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.013Ohm

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

157W Tc

Number of Terminations :

3

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

304A

Input Capacitance (Ciss) (Max) @ Vds :

2644pF @ 25V

Avalanche Energy Rating (Eas) :

125 mJ

JESD-609 Code :

e3

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

75V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Surface Mount :

No

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.75

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Series :

TrenchMOS™

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)