BUK7509-75A,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

560 mJ

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.009Ohm

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

440A

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

75V

Surface Mount :

No

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

75V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

230W Tc

FET Type :

N-Channel

HTS Code :

8541.29.00.75

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 1mA

ECCN Code :

EAR99

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6760pF @ 25V

Packaging :

Tube

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

Number of Terminations :

3

Series :

TrenchMOS™