BUK7237-55A,118
- Mfr.Part #
- BUK7237-55A,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 32.3A DPAK
- Stock
- 4,432
- In Stock :
- 4,432
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 24 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Breakdown Voltage :
- 55V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 25A, 10V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 77W Tc
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 32.3A Tc
- Contact Plating :
- Tin
- Power Dissipation :
- 77W
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 55V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 49 mJ
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 872pF @ 25V
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 26 Weeks
- Turn On Delay Time :
- 10 ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 32.3A
- Surface Mount :
- yes
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 20 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Rise Time :
- 62ns
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Datasheets
- BUK7237-55A,118

N-Channel Tape & Reel (TR) 37m Ω @ 25A, 10V ±20V 872pF @ 25V TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7237-55A,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 49 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 872pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 32.3A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 55V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BUK7237-55A,118 Features
the avalanche energy rating (Eas) is 49 mJ
a continuous drain current (ID) of 32.3A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 24 ns
BUK7237-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7237-55A,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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