BUK7212-55B,118
- Mfr.Part #
- BUK7212-55B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A DPAK
- Stock
- 4,336
- In Stock :
- 4,336
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- JEDEC-95 Code :
- TO-252AA
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Rise Time :
- 91ns
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Max Dual Supply Voltage :
- 55V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 167W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Pins :
- 3
- Turn On Delay Time :
- 18 ns
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2453pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 26 Weeks
- Turn-Off Delay Time :
- 48 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~185°C TJ
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Published :
- 2001
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Power Dissipation :
- 167W
- Drain Current-Max (Abs) (ID) :
- 75A
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 25A, 10V
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 45 ns
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 83A
- ECCN Code :
- EAR99
- Datasheets
- BUK7212-55B,118
N-Channel Tape & Reel (TR) 12m Ω @ 25A, 10V ±20V 2453pF @ 25V 35nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7212-55B,118 Overview
A device's maximal input capacitance is 2453pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 83A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 48 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 55V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
BUK7212-55B,118 Features
a continuous drain current (ID) of 83A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
BUK7212-55B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7212-55B,118 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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