BUK6E3R2-55C,127
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- Mfr.Part #
- BUK6E3R2-55C,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 120A I2PAK
- Stock
- 27,104
- In Stock ：
- 27,104
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Element Configuration :
- Single
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drain to Source Breakdown Voltage :
- 55V
- Turn-Off Delay Time :
- 450 ns
- Continuous Drain Current (ID) :
- 120A
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2010
- Turn On Delay Time :
- 61 ns
- Power Dissipation-Max :
- 306W Tc
- Packaging :
- Tube
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Fall Time (Typ) :
- 186 ns
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation :
- 306W
- Factory Lead Time :
- 12 Weeks
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 258nC @ 10V
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 25A, 10V
- Mounting Type :
- Through Hole
- Rise Time :
- 101ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 15300pF @ 25V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 2.8V @ 1mA
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±16V
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- BUK6E3R2-55C,127
N-Channel Tube 3.2m Ω @ 25A, 10V ±16V 15300pF @ 25V 258nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
BUK6E3R2-55C,127 Overview
A device's maximum input capacitance is 15300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 120A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 450 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 61 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK6E3R2-55C,127 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 450 ns
BUK6E3R2-55C,127 Applications
There are a lot of Nexperia USA Inc.
BUK6E3R2-55C,127 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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