BUK663R5-30C,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Radiation Hardening :

No

Power Dissipation-Max :

158W Tc

Operating Temperature :

-55°C~175°C TJ

Published :

2010

Fall Time (Typ) :

83 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Pin Count :

3

Drain-source On Resistance-Max :

0.0058ohm

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4707pF @ 25V

JESD-30 Code :

R-PSSO-G2

Max Dual Supply Voltage :

30V

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Rise Time :

54ns

Power Dissipation :

158W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

616A

Avalanche Energy Rating (Eas) :

242 mJ

Turn On Delay Time :

19 ns

Terminal Form :

Gull wing

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

135 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 25A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Surface Mount :

yes

FET Type :

N-Channel