BUK6607-75C118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Element Configuration :

Single

Series :

Automotive, AEC-Q101, TrenchMOS™

Transistor Element Material :

SILICON

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Number of Pins :

3

Power Dissipation-Max :

204W Tc

Reach Compliance Code :

not_compliant

Published :

2010

RoHS Status :

Non-RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

75V

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Rise Time :

54ns

Avalanche Energy Rating (Eas) :

191 mJ

Number of Elements :

1

Max Dual Supply Voltage :

75V

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

204W

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Surface Mount :

yes

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

110 ns

Number of Terminations :

2

Turn On Delay Time :

24 ns

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

100A

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0097Ohm

Turn-Off Delay Time :

247 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

JESD-609 Code :

e3

Terminal Form :

Gull wing