BSS7728NH6327XTSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Power Dissipation :

360mW

Rise Time :

2.7ns

Published :

2003

Lead Free :

Lead Free

Number of Terminations :

3

Series :

Automotive, AEC-Q101, SIPMOS®

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

360mW Ta

Current Rating :

200mA

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Feedback Cap-Max (Crss) :

4.4 pF

Halogen Free :

Halogen Free

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.3V @ 26μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Voltage - Rated DC :

60V

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Number of Elements :

1

Terminal Position :

Dual

JESD-609 Code :

e3

Max Dual Supply Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.2A

Vgs (Max) :

±20V

Pbfree Code :

yes

Number of Pins :

3

Continuous Drain Current (ID) :

200mA

Input Capacitance (Ciss) (Max) @ Vds :

56pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Drain-source On Resistance-Max :

5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V