BSS5130T116
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- Mfr.Part #
- BSS5130T116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SST3
- Stock
- 17,962
- In Stock ：
- 17,962
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 380mV @ 25mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Frequency - Transition :
- 320MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 200mW
- Datasheets
- BSS5130T116
PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS5130T116 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 380mV @ 25mA, 500mA.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BSS5130T116 Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 380mV @ 25mA, 500mA
BSS5130T116 Applications
There are a lot of ROHM Semiconductor
BSS5130T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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