BSR92PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Series :

SIPMOS®

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

109pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

140mA

Rise Time :

6.3ns

FET Type :

P-Channel

Halogen Free :

Halogen Free

Feedback Cap-Max (Crss) :

8 pF

Fall Time (Typ) :

71 ns

Drain Current-Max (Abs) (ID) :

0.14A

Threshold Voltage :

-1.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

-250V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 130μA

Published :

2013

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Number of Elements :

1

Number of Pins :

3

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Position :

Dual

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

140mA Ta

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

75 ns

Reference Standard :

AEC-Q101

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

11 Ω @ 140mA, 10V

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Turn On Delay Time :

6.4 ns

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

500mW Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant