BSR802NL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1447pF @ 10V

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 2.5V

Factory Lead Time :

10 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Published :

2011

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.5V

Number of Terminations :

3

Rise Time :

18ns

Pin Count :

3

Rds On (Max) @ Id, Vgs :

23m Ω @ 3.7A, 2.5V

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Terminal Position :

Dual

Series :

OptiMOS™

Number of Pins :

3

Power Dissipation-Max :

500mW Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

3.7A

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

20V

Vgs (Max) :

±8V

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

750mV @ 30μA

Drain Current-Max (Abs) (ID) :

2.9A

Pbfree Code :

yes

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V