BSP92PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.75

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

104 pF @ 25 V

Power Dissipation :

1.8 W

Vgs(th) (Max) @ Id :

2V @ 130µA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Max Operating Temperature :

150 °C

Continuous Drain Current (ID) :

260 mA

Vgs (Max) :

±20V

Polarity/Channel Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

PG-SOT223-4-21

Pulsed Drain Current-Max (IDM) :

1.04 A

Package / Case :

TO-261-4, TO-261AA

REACH SVHC :

No SVHC

Power Dissipation (Max) :

1.8W (Ta)

Drain to Source Breakdown Voltage :

250 V

Number of Pins :

4

Min Operating Temperature :

-55 °C

Series :

SIPMOS®

Voltage Rating (DC) :

-250 V

Manufacturer :

Infineon Technologies AG

Terminal Position :

Dual

Turn-Off Delay Time :

67 ns

Pin Count :

4

Subcategory :

Other Transistors

Power Dissipation-Max (Abs) :

1.8 W

Nominal Vgs :

-1.5 V

RoHS :

Compliant

Surface Mount :

yes

Package :

Bulk

Rds On Max :

12 Ω

Rise Time :

6 ns

Case Connection :

DRAIN

Drain to Source Resistance :

12 Ω

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

DS Breakdown Voltage-Min :

250 V

Drain to Source Voltage (Vdss) :

250 V

Number of Terminals :

4

Reach Compliance Code :

Compliant

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20 V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

2.8V, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.8 W

Rds On (Max) @ Id, Vgs :

12Ohm @ 260mA, 10V

Package Shape :

RECTANGULAR

Input Capacitance :

104 pF

Mount :

Surface Mount

Technology :

MOSFET (Metal Oxide)

Turn-On Delay Time :

5 ns

Lead Free :

Lead Free

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

0.26 A

Number of Elements :

1

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Gate Charge (Qg) (Max) @ Vgs :

5.4 nC @ 10 V

Current Rating :

-260 mA

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

12 Ω

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

260mA (Ta)

Product Status :

Active