BSP373 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

255

Drain-source On Resistance-Max :

0.3Ohm

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Avalanche Energy Rating (Eas) :

45 mJ

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

1.8W Ta

Number of Terminations :

4

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

6.8A

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

ECCN Code :

EAR99

Terminal Form :

Gull wing

Series :

SIPMOS®

Published :

2007

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

1.7A

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.7A, 10V

Surface Mount :

yes