BSP324L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G4

Manufacturer :

Infineon Technologies AG

Turn-Off Delay Time :

17 ns

Product Status :

Active

Current Rating :

170 mA

Technology :

MOSFET (Metal Oxide)

Min Operating Temperature :

-55 °C

Drain-source On Resistance-Max :

25 Ω

Turn-On Delay Time :

4.6 ns

Power Dissipation :

1.8 W

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.8 W

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

0.68 A

Terminal Finish :

Matte Tin (Sn)

Voltage Rating (DC) :

400 V

Gate to Source Voltage (Vgs) :

20 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Rise Time :

4.4 ns

Max Operating Temperature :

150 °C

Vgs(th) (Max) @ Id :

2.3V @ 94µA

Package / Case :

TO-261-4, TO-261AA

Transistor Element Material :

SILICON

Input Capacitance :

154 pF

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

170mA (Ta)

Gate Charge (Qg) (Max) @ Vgs :

5.9 nC @ 10 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Form :

Gull wing

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.17 A

Drain to Source Voltage (Vdss) :

400 V

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Terminal Position :

Dual

Pin Count :

4

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

400 V

Package :

Bulk

HTS Code :

8541.29.00.95

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

154 pF @ 25 V

Subcategory :

FET General Purpose Power

Polarity/Channel Type :

N-Channel

RoHS :

Compliant

Continuous Drain Current (ID) :

170 mA

Drain to Source Breakdown Voltage :

400 V

Series :

SIPMOS®

Supplier Device Package :

PG-SOT223-4-21

Qualification Status :

Not Qualified

Number of Pins :

4

Power Dissipation-Max (Abs) :

1.8 W

Surface Mount :

yes

Drain to Source Resistance :

25 Ω

Rds On (Max) @ Id, Vgs :

25Ohm @ 170mA, 10V

Radiation Hardening :

No

Continuous Drain Current Id :

0.17

Rds On Max :

25 Ω

Channel Type :

N

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Terminals :

4

Mount :

Surface Mount

FET Feature :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation (Max) :

1.8W (Ta)

Lead Free :

Lead Free