BSP322PL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~150°C TJ

Series :

SIPMOS®

Input Capacitance (Ciss) (Max) @ Vds :

372pF @ 25V

Supplier Device Package :

PG-SOT223-4

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

1V @ 380µA

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Number of Elements :

1

Rds On Max :

800 mΩ

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Power Dissipation :

1.8W

Fall Time (Typ) :

8.3 ns

Continuous Drain Current (ID) :

1A

Number of Pins :

4

Rise Time :

4.3ns

Radiation Hardening :

No

Turn-Off Delay Time :

21.2 ns

Power Dissipation-Max :

1.8W Ta

Package / Case :

TO-261-4, TO-261AA

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance :

372pF

Turn On Delay Time :

4.6 ns

Rds On (Max) @ Id, Vgs :

800mOhm @ 1A, 10V