BSP322PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

PG-SOT223-4-21

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

372 pF @ 25 V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

FET Type :

P-Channel

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

4 A

Vgs(th) (Max) @ Id :

1V @ 380µA

Qualification Status :

Not Qualified

Power Dissipation (Max) :

1.8W (Ta)

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G4

Operating Temperature :

-55°C ~ 150°C (TJ)

Surface Mount :

yes

Pbfree Code :

yes

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Technology :

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C :

1A (Tc)

Polarity/Channel Type :

P-Channel

Power Dissipation-Max (Abs) :

1.8 W

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100 V

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

57 mJ

Reach Compliance Code :

Compliant

JESD-609 Code :

e3

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1 A

Rds On (Max) @ Id, Vgs :

800mOhm @ 1A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Bulk

Drain-source On Resistance-Max :

0.8 Ω

Number of Terminals :

4

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

260

Series :

SIPMOS®

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

16.5 nC @ 10 V

Pin Count :

4

Subcategory :

Other Transistors

DS Breakdown Voltage-Min :

100 V

Manufacturer :

Infineon Technologies AG

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED