BSP322PH6327XTSA1
- Mfr.Part #
- BSP322PH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 1A SOT223-4
- Stock
- 59,987
- In Stock :
- 59,987
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 1.8W
- Turn-Off Delay Time :
- 21.2 ns
- Drain-source On Resistance-Max :
- 0.8Ohm
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 372pF @ 25V
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Terminations :
- 4
- Width :
- 3.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Drain Current-Max (Abs) (ID) :
- 1A
- JESD-609 Code :
- e3
- Rise Time :
- 4.3ns
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 1A
- Max Dual Supply Voltage :
- -100V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Element Configuration :
- Single
- Series :
- SIPMOS®
- Drain to Source Voltage (Vdss) :
- 100V
- Height :
- 1.6mm
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 8.3 ns
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Cut Tape (CT)
- Package / Case :
- TO-261-4, TO-261AA
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2012
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 1A, 10V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 1V @ 380µA
- Operating Temperature :
- -55°C~150°C TJ
- Halogen Free :
- Halogen Free
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 4.6 ns
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 1.8W Ta
- Length :
- 6.5mm
- Lead Free :
- Lead Free
- Datasheets
- BSP322PH6327XTSA1

P-Channel Cut Tape (CT) 800m Ω @ 1A, 10V ±20V 372pF @ 25V 16.5nC @ 10V 100V TO-261-4, TO-261AA
BSP322PH6327XTSA1 Description
BSP322PH6327XTSA1 is a p-channel Power MOPSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of the BSP322PH6327XTSA1 is -55°C~150°C TJ and its maximum power dissipation is 1.8W. BSP322PH6327XTSA1 has 4 pins and it is available in Cut Tape (CT) packaging way.
BSP322PH6327XTSA1 Features
-
Enhancement mode
-
Logic level
-
Avalanche rated
-
Pb-free lead plating; RoHS compliant
-
Qualified according to AEC Q101
-
Halogen-free according to IEC61249-2-21
BSP322PH6327XTSA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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