BSP321PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

MOSFET (Metal Oxide)

Drain to Source Resistance :

900 mΩ

Package Shape :

RECTANGULAR

Gate to Source Voltage (Vgs) :

20 V

Drain-source On Resistance-Max :

0.9 Ω

FET Type :

P-Channel

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

980mA (Tc)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Manufacturer :

Infineon Technologies AG

FET Feature :

-

Power Dissipation :

1.8 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Subcategory :

Other Transistors

Pin Count :

4

JESD-609 Code :

e3

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

1 Week

Number of Pins :

4

DS Breakdown Voltage-Min :

100 V

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G4

Power Dissipation-Max (Abs) :

1.8 W

Product Status :

Active

Nominal Vgs :

-3 V

Series :

SIPMOS®

Mount :

Surface Mount

Number of Terminals :

4

Package / Case :

TO-261-4, TO-261AA

Avalanche Energy Rating (Eas) :

57 mJ

Surface Mount :

yes

Turn-Off Delay Time :

16.5 ns

Package :

Bulk

Rds On Max :

900 mΩ

Pulsed Drain Current-Max (IDM) :

3.9 A

Drain to Source Breakdown Voltage :

100 V

Input Capacitance :

319 pF

Mounting Type :

Surface Mount

Turn-On Delay Time :

5.9 ns

Max Power Dissipation :

1.8 W

Vgs(th) (Max) @ Id :

4V @ 380µA

Radiation Hardening :

No

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pbfree Code :

yes

Number of Elements :

1

Max Operating Temperature :

150 °C

Input Capacitance (Ciss) (Max) @ Vds :

319 pF @ 25 V

Drain Current-Max (Abs) (ID) :

0.98 A

Element Configuration :

Single

Min Operating Temperature :

-55 °C

Rds On (Max) @ Id, Vgs :

900mOhm @ 980mA, 10V

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Qualification Status :

Not Qualified

Supplier Device Package :

PG-SOT223-4-21

Drain to Source Voltage (Vdss) :

100 V

RoHS :

Compliant

Power Dissipation (Max) :

1.8W (Ta)

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

980 mA

Polarity/Channel Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

4.4 ns