BSP320SL6433HTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

FET Type :

N-Channel

Terminal Form :

Gull wing

Number of Terminations :

4

Vgs(th) (Max) @ Id :

4V @ 20µA

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

60V

Fall Time (Typ) :

35 ns

Packaging :

Tape and Reel (TR)

Rise Time :

25ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Vgs (Max) :

±20V

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

1.8W Ta

Turn On Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

2.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Turn-Off Delay Time :

25 ns

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Published :

2008

Power Dissipation :

1.8W

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.9A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

SIPMOS®

Avalanche Energy Rating (Eas) :

60 mJ

Number of Pins :

4

RoHS Status :

RoHS Compliant