BSP320SL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

MOSFET (Metal Oxide)

Terminal Position :

Dual

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2.9A (Tj)

FET Feature :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Product Status :

Active

Drain to Source Voltage (Vdss) :

60 V

Polarity/Channel Type :

N-Channel

Power Dissipation :

1.8

HTS Code :

8541.29.00.95

Subcategory :

FET General Purpose Power

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

340 pF @ 25 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Terminals :

4

Pulsed Drain Current-Max (IDM) :

11.6 A

Continuous Drain Current Id :

2.9

Rds On (Max) @ Id, Vgs :

120mOhm @ 2.9A, 10V

Drain-source On Resistance-Max :

0.12 Ω

Power Dissipation (Max) :

1.8W (Ta)

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

60 mJ

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

2.9 A

Series :

SIPMOS®

Supplier Device Package :

PG-SOT223-4-21

Package :

Bulk

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Package Shape :

RECTANGULAR

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Channel Type :

N

DS Breakdown Voltage-Min :

60 V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 20µA

Manufacturer :

Infineon Technologies AG

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G4

Case Connection :

DRAIN

Terminal Form :

Gull wing

FET Type :

N-Channel

Qualification Status :

Not Qualified

Package / Case :

TO-261-4, TO-261AA

Pin Count :

4

Power Dissipation-Max (Abs) :

1.8 W