BSP320SH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PDSO-G4

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.12Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 7V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

2.9A Tj

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.9A, 10V

Factory Lead Time :

10 Weeks

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

60 mJ

Terminal Position :

Dual

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

4V @ 20µA

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2.9A

Pulsed Drain Current-Max (IDM) :

11.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-261-4, TO-261AA

Published :

2017

Power Dissipation-Max :

1.8W Ta

RoHS Status :

ROHS3 Compliant