BSP320S E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Surface Mount :

yes

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Power Dissipation-Max :

1.8W Ta

Peak Reflow Temperature (Cel) :

255

ECCN Code :

EAR99

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.12Ohm

Drain Current-Max (Abs) (ID) :

2.9A

DS Breakdown Voltage-Min :

60V

Number of Terminations :

4

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Operating Mode :

ENHANCEMENT MODE

Published :

2007

Series :

SIPMOS®

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Pin Count :

4

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.9A, 10V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 20µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED