BSP318S E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Configuration :

Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.6A, 10V

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-261-4, TO-261AA

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 20μA

Vgs (Max) :

±20V

Number of Elements :

1

Published :

1999

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2.6A

Drain-source On Resistance-Max :

0.15Ohm

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.8W Ta