BSP317PL6327HTSA1
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- Mfr.Part #
- BSP317PL6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 430MA SOT223-4
- Stock
- 6,023
- In Stock ：
- 6,023
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1.8W Ta
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Ta
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 430mA
- Vgs(th) (Max) @ Id :
- 2V @ 370µA
- Turn-Off Delay Time :
- 254 ns
- Max Operating Temperature :
- 150°C
- Rise Time :
- 11.1ns
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 15.1nC @ 10V
- Input Capacitance :
- 262pF
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 4Ohm @ 430mA, 10V
- Rds On Max :
- 4 Ω
- Fall Time (Typ) :
- 67 ns
- Supplier Device Package :
- PG-SOT223-4
- Drain to Source Voltage (Vdss) :
- 250V
- Mount :
- Surface Mount
- Published :
- 2002
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 262pF @ 25V
- Series :
- SIPMOS®
- Turn On Delay Time :
- 5.7 ns
- Datasheets
- BSP317PL6327HTSA1
P-Channel Tape & Reel (TR) 4Ohm @ 430mA, 10V ±20V 262pF @ 25V 15.1nC @ 10V 250V TO-261-4, TO-261AA
BSP317PL6327HTSA1 Overview
A device's maximum input capacitance is 262pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 430mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 254 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
BSP317PL6327HTSA1 Features
a continuous drain current (ID) of 430mA
the turn-off delay time is 254 ns
a 250V drain to source voltage (Vdss)
BSP317PL6327HTSA1 Applications
There are a lot of Infineon Technologies
BSP317PL6327HTSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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