BSP317PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

Base Product Number :

BSP317

Drain Current-Max (Abs) (ID) :

0.43 A

Reach Compliance Code :

Compliant

Termination :

SMD/SMT

Drain-source On Resistance-Max :

4 Ω

Technology :

MOSFET (Metal Oxide)

DS Breakdown Voltage-Min :

250 V

Mounting Type :

Surface Mount

Voltage Rating (DC) :

-250 V

Product Status :

Active

Turn-On Delay Time :

5.7 ns

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

15.1 nC @ 10 V

Subcategory :

Other Transistors

Number of Elements :

1

Nominal Vgs :

-1.5 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

4

Continuous Drain Current (ID) :

430 mA

Max Power Dissipation :

1.8 W

Power Dissipation :

1.8 W

HTS Code :

8541.29.00.75

Terminal Form :

Gull wing

Input Capacitance :

262 pF

Mount :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Package :

Bulk

Dual Supply Voltage :

-60 V

Rds On (Max) @ Id, Vgs :

4Ohm @ 430mA, 10V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

430mA (Ta)

Threshold Voltage :

-1.5 V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20 V

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

250 V

Rds On Max :

4 Ω

Number of Terminals :

4

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Peak Reflow Temperature (Cel) :

260

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Polarity/Channel Type :

P-Channel

ECCN Code :

EAR99

Factory Lead Time :

1 Week

Power Dissipation (Max) :

1.8W (Ta)

FET Feature :

-

Rise Time :

11.1 ns

Manufacturer :

Infineon Technologies AG

Pulsed Drain Current-Max (IDM) :

1.72 A

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

1.8 W

Max Operating Temperature :

150 °C

JESD-30 Code :

R-PDSO-G4

Drain to Source Voltage (Vdss) :

250 V

RoHS :

Compliant

Vgs(th) (Max) @ Id :

2V @ 370µA

Turn-Off Delay Time :

254 ns

FET Type :

P-Channel

Width :

6.7 mm

Case Connection :

DRAIN

Packaging :

Cut Tape

Input Capacitance (Ciss) (Max) @ Vds :

262 pF @ 25 V

Vgs (Max) :

±20V

Drain to Source Resistance :

4 Ω

Supplier Device Package :

PG-SOT223-4-21

Terminal Position :

Dual

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Current Rating :

-430 mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

4