BSP317PH6327XTSA1
- Mfr.Part #
- BSP317PH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 430MA SOT223-4
- Stock
- 11,416
- In Stock :
- 11,416
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Turn-Off Delay Time :
- 254 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Pin Count :
- 4
- Drain-source On Resistance-Max :
- 4Ohm
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 1.8W
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2V @ 370µA
- Drain to Source Voltage (Vdss) :
- 250V
- Published :
- 2008
- Gate Charge (Qg) (Max) @ Vgs :
- 15.1nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1.8W Ta
- Rise Time :
- 11.1ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 262pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 430mA, 10V
- Height :
- 1.6mm
- Factory Lead Time :
- 10 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- SIPMOS®
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 430mA
- Packaging :
- Cut Tape (CT)
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Ta
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 67 ns
- Max Dual Supply Voltage :
- -250V
- Width :
- 3.5mm
- Length :
- 6.5mm
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -250V
- Number of Pins :
- 4
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 5.7 ns
- Datasheets
- BSP317PH6327XTSA1

P-Channel Cut Tape (CT) 4 Ω @ 430mA, 10V ±20V 262pF @ 25V 15.1nC @ 10V 250V TO-261-4, TO-261AA
BSP317PH6327XTSA1 Overview
A device's maximum input capacitance is 262pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 430mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-250V, and this device has a drain-to-source breakdown voltage of -250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 254 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by -250V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
BSP317PH6327XTSA1 Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 254 ns
a 250V drain to source voltage (Vdss)
BSP317PH6327XTSA1 Applications
There are a lot of Infineon Technologies
BSP317PH6327XTSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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