BSP316PL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

7.5ns

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.68A

Power Dissipation-Max :

1.8W Ta

Turn On Delay Time :

4.7 ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 170µA

Current - Continuous Drain (Id) @ 25°C :

680mA Ta

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Fall Time (Typ) :

25.9 ns

Published :

2002

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

4

Turn-Off Delay Time :

67.4 ns

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

2.72A

Terminal Position :

Dual

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

680mA

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

4

DS Breakdown Voltage-Min :

100V

Radiation Hardening :

No

Package / Case :

TO-261-4, TO-261AA

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 680mA, 10V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

FET Type :

P-Channel

Transistor Element Material :

SILICON

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Mount :

Surface Mount

Series :

SIPMOS®

JESD-609 Code :

e3

Pbfree Code :

yes